Abatement system targeting a by-pass effluent stream of a semiconductor process tool

ABSTRACT

An apparatus and method for abating toxic and/or hazardous gas species in a diluent gas stream line deriving from a by-pass line of a semiconductor process tool, comprising contacting the diluent gas stream with a dry resin sorbent material having an affinity for the toxic and/or hazardous gas species to effect the removal of at least a portion of the toxic and/or hazardous gas species by a chemisorbent or physisorbent reaction between the sorbent bed and the toxic gas component effectively reduces the concentration of the toxic gas component in the process diluent stream to below TLV.

BACKGROUND OF INVENTION

[0001] BACKGROUND Embodiments described relate to dry resin sorbentsystems in a by-pass line of a semiconductor process tool useful forreducing toxic and/or hazardous gaseous components deriving therefrom.

[0002] BACKGROUND OF THE RELATED ART Typical and emerging semiconductorEpitaxial (EPI) processes use toxic and/or hazardous source gases suchas arsine (AsH₃), phosphine (PH₃), germane (GeH₄) and diborane (B₂H₆)for deposition of hetero-epitaxial thin films. Many of these processesare equipped with point-of use (POU) water scrubbers, which are designedto abate specific gases used in such processes, such as dichlorosilane(SiH₂Cl₂). However, wet scrubbers are ineffective at abating manyhydride gases such as AsH₃ and PH₃. If a point-of-use water scrubber isused, the unabated hydride gases may be released to the roof, where theycan be further re-entrained into the semiconductor facility through makeup air fans.

[0003] These toxic and/or hazardous gases are typically diluted withhydrogen when fed to EPI reactors, many of which continuously by-passsome of that gas to “equalize” pressure/flow to the reactor. By suchdesign, during deposition, only a small amount of hydride gas flows tothe reactor, while a much larger amount bypasses the chamber and goesdirectly to vent. The by-pass can go to outside air directly or to a POUabatement system on the EPI reactor.

[0004] Many EPI processes feed hydride gases in ppm levels and mass flowcontrollers are typically used to control their flow. The hydride gasmay be used in combination with diluents and/or are combined therewithin a mixing manifold up-stream of a mass-flow controller. Pressure inthe manifold is maintained at a constant level by pressure controllers,transducers etc.

[0005] It is plausible to use a thermal oxidizer in the bypass line toreduce the occurrence of hydride gas components being released to theenvironment or ventilation system. However, if the hydride gas componentin the bypass line is, for example, arsine, arsenic-containing waste isgenerated, which must be handled and treated carefully as arsenic ishighly toxic. Further, a high cost of ownership is associated withthermal oxidizers, particularly in the area of fuel consumption.

[0006] Alternatively a combination thermal/wet scrubber may be used inthe bypass line to reduce the occurrence of hydride gas components beingreleased to the environment or ventilation system. However, if arsenicis present in the by-pass line, arsenic-containing by-products willbecome entrained in the wastewater. The arsenic-contaminated water ishighly controlled in certain areas of the United States and will likelyrequire further treatment prior to disposal. Moreover, initial costs ofsuch a system start in a six-digit dollar range and maintenance andoperational costs are predicted to start in a five-digit dollar range.

[0007] Therefore, it is one objective of the present invention, toprovide an inexpensive solution to controlling the release of hazardousand/or toxic gas components from a bypass line upstream of asemiconductor process tool.

[0008] It is a further objective of the present invention to provide aninexpensive solution to controlling the release of hazardous and/ortoxic gas components from a point-of-use water scrubber.

SUMMARY OF INVENTION

[0009] SUMMARY The present invention provides a by-pass abatement systemand process for removing pollutants from a by-pass effluent gaseousstream, which is preferably derived from a semiconductor process tool.

[0010] In one aspect, the present invention relates to an abatementapparatus and system for use in a by-pass process line originating froma semiconductor process.

[0011] In a further aspect, the invention relates to an abatementapparatus, comprising a sorbent-based scrubber, which when joined influid flow communication with an effluent gas stream comprising ahazardous component, reduces the concentration of the hazardouscomponent in the effluent gas stream.

[0012] In a still further aspect, the present invention relates to apoint-of-use scrubber for treating a toxic and/or hazardous component inan effluent waste stream deriving from a by-pass line of a semiconductorprocess tool, said scrubber comprising a canister having:an inlet in gasflow communication with the process tool”s bypass line; an outlet; and asorbent bed therebetween;wherein said sorbent bed contacts the toxicand/or hazardous component in the effluent waste stream to effectivelyreduce the concentration therein of the toxic and/or hazardouscomponent.

[0013] In a still further aspect, the present invention relates to anabatement apparatus for reducing the concentration of a toxic and/orhazardous component, in a by-pass line of an epitaxial depositionreactor, the apparatus comprising an up-flow canister.

[0014] In a further aspect the present invention, relates to apoint-of-use, scrubber for treating an effluent waste stream comprisinga toxic and/or hazardous component, said waste stream deriving from aby-pass line of a semiconductor process, said scrubber comprising:anup-flow canister comprising:a lower section plenum space;an uppersection plenum space; at least one dry resin sorbent bed layertherebetweenan inlet in gas flow communication with the by-pass processline; and an outlet, arranged such that the process effluent wastestream flows in an upward direction to effectively reduce theconcentration of the toxic/and or hazardous component from the effluentwaste stream.

[0015] In a further aspect the present invention, relates to a processfor reducing the concentration of a toxic and/or hazardous component ina diluent waste stream deriving from a by-pass line of semiconductorprocess tool, said process comprising, contacting the diluent gas streamwith a dry resin sorbent material having an affinity for the toxicand/or hazardous component, to effect the removal of at least a portionof the toxic and/or hazardous component by a chemisorbent orphysisorbent reaction between the sorbent material and the toxic gascomponent in the process diluent waste stream to below TLV.

BRIEF DESCRIPTION OF DRAWINGS

[0016] BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows a schematicrepresentation of a typical epitaxial deposition system according to oneembodiment of the present invention.

[0017]FIG. 2 shows a schematic representation of a by-pass abatementsystem according to one embodiment of the present invention.

[0018]FIG. 3 shows a schematic representation of a bypass abatementsystem according to a further embodiment of the instant invention.

[0019]FIG. 4 shows a schematic representation of a bypass abatementsystem according to a further embodiment of the instant invention.

[0020]FIG. 5 shows a schematic representation of a bypass abatementsystem according to a further embodiment of the instant invention.

[0021]FIG. 6 shows a schematic representation of a bypass abatementsystem according to a further embodiment of the instant invention.

DETAILED DESCRIPTION

[0022] DETAILED DESCRIPTION The present invention provides a by-passabatement system and process for removing pollutants from a by-passeffluent gaseous stream, which is preferably derived from asemiconductor process tool.

[0023] The invention comprises a scrubber in a by-pass line of asemiconductor process tool, where prior to such invention, a toxic gascomponent having been diluted by a diluent gas had been by-passed fromthe process tool for discharge to atmosphere, house-exhaust or otherdisposition steps.

[0024] The scrubber accommodates the collection of toxic and/orhazardous gas components in a diluent by-pass stream, typicallyconsidered pollutants, by contacting the diluent gas stream with asorbent bed material, which may be fixed or fluidized and may work byphysical adsorption or irreversible chemisorption.

[0025] Preferably the sorbent bed comprises a dry resin sorbent materialarranged in a canister, such that by-pass effluent enters a headspace(plenum space) above or below the bed prior to contact with the sorbentmaterial. In order to provide headspace below the bed, a support may beinserted into the canister to support the sorbent bed. Preferablyeffluent enters the canister at a cross-sectional center at a bed inlet(the cross-section being transverse to the flow direction of the gasstream being flowed through the bed).

[0026] The canister having any shape or size useful for treating aby-pass effluent stream comprising a toxic and/or hazardous component,provides for flow of the by-pass effluent stream into the canister andthrough the sorbent bed in either an upward or a downward direction, ina vertically upstanding canister. In a preferred embodiment, thecanister is of an up-flow design having a cylindrical or cubic geometryand a volume that is between 0.1 to 1000 liters. In a more preferredembodiment, the canister volume is between 4 and 50 liters.

[0027] The cubic container may be adapted to minimize volumetric spacerequirements in storage, transport and use. In one specific embodiment,the abatement system includes a cubic up-flow canister having at leastupper and lower plenum spaces and a sorbent bed section therebetween.

[0028] As used herein the terms “cube and “cubic”are interchangeable andare defined as having three dimensions and six faces, where the anglebetween any two adjacent faces is a right angle.

[0029] The up-flow canister as used herein is more fully described inco-pending, commonly assigned, U.S. patent application Ser. No.10/370,159 having a filing date of Feb. 19, 2003, for Low Pressure DropCanister for Fixed Bed Scrubber Applications and Method of Using Same,in the names of Paul J. Marganski, Theodore A. Shreve, Joseph Sweeney,Jose Arno, Mark Holst, and Karl Olander, and is incorporated herein byreference in its entirety.

[0030] The up-flow canister design counteracts any flow distributionproblems that otherwise may occur in the flow of gas through the sorbentbed. Preferably, the up-flow canister comprises:a lower section plenumspace;a center section space, for containment of a sorbent bedmaterial;an upper section plenum space; an inlet in gas flowcommunication with the semiconductor process effluent stream, comprisingmeans for introducing the process effluent stream to the lower sectionplenum space; and an outlet comprising means for egress of the processeffluent stream from the canister.

[0031] The lower section plenum space, upper section plenum space andsorbent bed section, may each occupy any percent of the interior sectionof the canister and may be readily determined by one skilled in the art.Variables affecting the volume occupied by each of the three sectionsinclude but are not limited to process, volumes of toxic component to beabated, resin choice, effluent fluid flow, canister shape, inlet designetc.

[0032] As used herein, the by-pass abatement system and process areintended to be broadly construed, and may alternatively comprise,consist, or consist essentially of the specific stated componentshereafter specifically identified. Although exemplary embodimentsdescribe particular aspects, any changes, modifications, andsubstitutions may be made without departing from the spirit and scope ofthese embodiments.

[0033] In some prior art systems, diluent mass flow controller vented tothe POU water scrubber, during deposition, which was typicallyineffective in trapping and abating the toxic hydride component.

[0034] The canister of the abatement system may couple to asemiconductor process tool in a by-pass line in upstream or downstreamrelationship to a house or other POU scrubber system or the canister maycouple to the by-pass line as a stand-alone abatement system dedicatedto the abatement of toxic and/or hazardous component in the by-passline. In a preferred embodiment, the by-pass abatement system employinga dry resin sorbent bed in an up-flow or down-flow canister, is eitherstand-alone or upstream of a house or POU abatement system and serves toprevent the release to atmosphere or house-exhaust, of toxic and/orhazardous gaseous components in a process effluent stream, not trappedby the primary abatement system.

[0035] Preferably, the by-pass abatement system targets a diluent massflow controller (MFC) in a process gas manifold, having incorporatedtherein, a bypass line for exhaust of excess process diluent gas fromthe process manifold. The by-pass line may be coupled to a POU or houseabatement system, atmosphere, vent or a roof of a semiconductorfacility.

[0036] When the excess process diluent gas contains toxic gascomponents, and the by-pass line of the gas manifold exhausts the excessprocess diluent to atmosphere, vent or a roof of a semiconductorfacility, the potential is present, for the toxic gas component to enterthe environment or depending on environmental conditions, for theexhausted process gases to become entrained in the air up-take system.

[0037] Furthermore, when the excess process diluent stream contains atoxic gas component such as arsine, phosphine, germane, etc., apoint-of-use or house abatement system does not sufficiently control therelease of the toxic component to atmosphere, a vent or a roof of asemiconductor facility.

[0038] In typical EPI process tools, a mixing manifold upstream of thetool is used to combine diluent and doping gas, for example hydrogen andarsine respectively. Dopant gas typically flows to the mixing manifoldthrough a first mass flow controller at rates of between 0-300 sccm anddiluent typically flows through a second and separate mass flowcontroller at rates between 0-30 SLM. Between 80 to 99% of the resultingdiluent hydride stream is by-passed from the system. Accordingly, in apreferred embodiment, the abatement system of the instant inventiontargets a by-pass line in the mixing manifold, upstream of the mixingmanifold mass flow controller of an EPI process tool.

[0039] In a further embodiment, the abatement apparatus of the presentinvention, comprises an up-flow canister, housing a sorbent bed materialcomprising at least one metal oxide and more preferably a mixture of atleast two metal oxides.

[0040] Advantageously, the instant invention provides an inexpensivesolution to the release of unabated toxic gas component from an EPIprocess, by targeting the diluent flow rather than the total exhaust gasflow. The inexpensive benefits of the by-pass abatement system includebut are not limited to its zero foot-print requirements and lowmaintenance requirements, as the system, may be mounted above a processtool in exhaust duct work, has no moving parts and generates only smallamounts of toxic waste for disposal. Additionally, there are no adverseconditions occurring in the EPI process due to the operation of such asystem.

[0041] The incorporation of an abatement system, using a dry resinsorbent bed, having an affinity for toxic gas components such as arsine,phosphine, germane, etc., into the by-pass line of a process manifold,controls the release of the toxic gas components to atmosphere, vent orthe roof of a semiconductor facility. Advantageously, the instantinvention controls the exhaustion of toxic and/or hazardous gaseouscomponents, originating from a by-pass line of a diluent gas manifold ofa semiconductor process.

[0042]FIG. 1 shows a typical Prior Art epitaxial deposition system andprocess 100, comprising dopant gas source 102 and diluent gas source 104coupled to process line 106 through mixing manifold 108. A dopanthydride gas component such as PH₃, AsH₃, GeH₄, etc. and diluent gas suchas hydrogen, flow to mixing manifold 108, in a predetermined ratio,through source delivery line 110 and diluent delivery line 112, wherethe dopant and diluent gases mix to form a diluent process effluent.Mass flow controller 114, downstream of mixing manifold 108, controlsthe flow of diluent process effluent to epitaxial deposition chamber116. When, pressure controller 118, in the mixing manifold, exceeds apredetermined pressure, excess diluent process effluent flows intobypass line 120, through vent valve 126, to either atmosphere 124, or apoint-of-use wet scrubber system or other house abatement system 122 andthen to atmosphere 124. Effluent waste stream from epitaxial depositionchamber 116 flows through line 132 to point-of-use wet scrubber unit 122useful for abating process acid gases such as HCl, SiH₂ Cl₂ and SiHCl₃,originating from source 128. When process conditions include toxicand/or hazardous hydride gases originating from manifold 108, the toxichydride gas component enters the atmosphere unabated, from bothdeposition chamber 116 and bypass line 120 by way of vents 124 and 138respectively.

[0043]FIGS. 2-5 show the epitaxial deposition system of FIG. 1, havinginstalled therein a by-pass scrubber according to further embodiments ofthe present invention. In describing such embodiments, with respect toFIGS. 2-5, like numerals will be used in accordance with FIG. 1 toidentify similar features.

[0044]FIG. 2 depicts an epitaxial deposition system employing apoint-of-use by-pass scrubber 134 coupled to bypass line 120. In such asystem, mass flow controller 114, downstream of mixing manifold 108,controls the flow of diluent process effluent to epitaxial depositionchamber 116. When, pressure controller 118, in the mixing manifold,exceeds a predetermined pressure, excess diluent process effluentcomprising a toxic gas component, flows into bypass line 120, throughvent valve 126, to by-pass, up-flow canister 134, where a sorbent bedmaterial, housed therein, contacts a toxic gas component, and achemisorbent or physisorbent reaction between the sorbent bed materialand the toxic gas component effectively reduces the concentration of thetoxic gas component in the process diluent stream to below TLV.Accordingly, an effluent waste stream having a reduced concentration oftoxic gas component is exhausted from scrubber 134, to environment, orfor further disposition in exhaust line 124.

[0045]FIG. 3 depicts a system where excess diluent process effluentcomprising toxic gas component, flows into bypass line 120, through ventvalve 126, to by-pass, up-flow canister 134, where a sorbent bedmaterial, housed therein, contacts the toxic gas component and reacts tochemisorb or physisorb thereon at least a portion of the toxic gascomponent originating from the diluent mass flow controller 114. Aresulting effluent stream having a reduced concentration of at least onetoxic gas component exits canister 134 and flows through valve 142 topoint-of-use abatement system (for example wet scrubber) 122, forfurther treatment and disposition 138.

[0046]FIG. 4 depicts a system where process fluid comprising a toxic gascomponent is exhausted from epitaxial deposition reactor 116, intoprocess exhaust line 132 to point-of-use scrubber system 122, where awet or thermal reaction effects the removal of at least a portion of thetoxic gas component. The resulting effluent waste stream is exhaustedfrom system 122 in effluent waste stream line 138 through valve 126 andinto up-flow canister 134 where a chemisorbent or physisorbent reactionbetween a sorbent bed housed therein, and the toxic gas component in theeffluent waste stream effectively reduces the concentration of at leastone toxic component unabated by the main scrubber system 122.Accordingly, such a system provides for a polisher for scrubbing aneffluent waste stream after a main or house abatement system has failedto remove at least a portion of toxic gas component from the effluentwaste stream, said polisher comprising an up-flow canister havingdisposed therein a dry resin sorbent bed.

[0047]FIG. 5 depicts a system similar to that described hereinabove forFIG. 2, except for further inclusion of epi-reactor by-pass line 144,which provides for an alternative scrubber system for effluent wastestream deriving from reactor 116. Such a system provides for switchoverfrom a main abatement system 122 to a by-pass scrubber system 134, byway of valves 142 and 126. Such a system enables switchover from a mainscrubber 122, to a by-pass system 134, for more efficient effluenttreatment as well as a back up in the event the main abatement system istaken off-line.

[0048] The dry-resin sorbent, abatement system of the instant invention,is useful for removing up to 99% of diluted hydride gas component in abypass line of an epitaxial deposition process tool, and when the dryresin sorbent system is placed downstream of a point-of-use wetscrubber, which serves as a main abatement system for a particularsemiconductor process tool, the instant invention, aids in the removalof toxic gas component unabated by the wet abatement system. Thus theinstant invention obviates the potential release of hazardous and toxicgas components to a ventilation system and/or to the environment.

[0049] In a further embodiment, the present invention is directed to aprocess for reducing the concentration of at least one toxic and/orhazardous component in an effluent waste stream deriving from a by-passline of a semiconductor process tool, comprising contacting the toxicand/or hazardous component with a dry resin sorbent material that isreactive with the toxic and/or hazardous component to substantiallyreduce the concentration of the toxic and/or hazardous component in theeffluent stream. Preferably the toxic and or hazardous component is ahydride gas and the hydride gas component reacts with the dry resinsorbent material by chemisorption and/or physisorption to reduce theconcentration in the effluent stream, of the hydride gas component.

[0050] By targeting the diluent mass flow controller, EPI process gases,such as, SiH₂ Cl₂ and SiHCl₃, which are effectively controlled using wetand thermal oxidation systems pass to a thermal, wet or otherpoint-of-use abatement system for treatment, while the diluent processline comprising from 80-99% of diluted hydride dopant gases fordischarge from the system upstream of the process tool, has coupledthereto, an abatement system, comprising a dry resin sorbent bed, forcontrolling the release of toxic and hazardous hydride gases in a bypassline that are sent to a point-of-use or house scrubber system comprisinga wet abatement system having little to no affect at scrubbing hydridedopant gases.

[0051]FIG. 6 shows a bypass abatement system 200, according to oneembodiment of the present invention. Diluent process effluent streamcomprising a toxic gas component, originating from mixing manifold 210,upstream from mass flow controller 202 and process tool 230, flows inbypass line 204, through valve 206, and inlet 210, into lower sectionplenum space 212 of canister 214, where the effluent stream mixes andexpands, until the process effluent is mass transported into a firstsorbent bed section 216, in an up-flow direction, by a pressuredifferential induced by fluid motive force device, such as an eductor orventuri 218. The toxic gas component contacts sorbent material 216, andthe sorbent material, having an affinity for the toxic gas componentretains thereon and/or reacts therewith, by chemisorption orphysisorption at least a portion of the toxic gas component, in anevenly distributed manner, thereby creating a uniform fluid front ormass transfer zone (MTZ), which theoretically transfers evenly throughthe sorbent bed material.

[0052] The effluent stream having a reduced concentration of toxic gascomponent exits the sorbent bed section 216 and flows into an optionalsecond plenum space 228, where the effluent stream, again mixes andexpands, until the process effluent is mass transported into an optionalsecond sorbent bed section 232, in an up-flow direction, by the pressuredifferential induced by the fluid motive force device 218. Toxic gascomponent not chemisorbed or physisorbed by first sorbent bed section216, contacts sorbent bed section 232 and second sorbent bed section232, retains thereon and/or reacts therewith, by chemisorption orphysisorption, at least a second portion of toxic gas component, in anevenly distributed manner.

[0053] The effluent stream having a reduced concentration of toxic gascomponent, exits second sorbent bed section where it again mixes andexpands until exhaustion through outlet port 222 where the effluentstream passes to environment, further treatment or other dispositionsteps.

[0054] Canister 214 may employ gas flow distributor elements (not shown)to effect a central efflux of gas for distribution across the entirecross-section of the container, to provide uniform flow withoutoccurrence of hydrodynamic anomalies, such as dead space, bypassing,etc.

[0055] Various ancillaries are usefully employed with the scrubbersystem as described hereinabove including but not limited to end pointmonitoring, pressure and temperature sensing. Such ancillaries be linkedin signal transmission relationship with a computer or other automaticprocess control means, for enabling automation responsiveness to varioussystem parameters.

[0056] Referring again to FIG. 6, an end point monitor 224, such as atoxic gas sensor, may be coupled to an output module for outputting anindication of breakthrough of the contaminant(s) in the effluent gasstream when the capacity of the scrubber bed for active processing ofthe effluent gas stream is exhausted or reaches a predetermined approachto exhaustion (e.g., reaches a point of exhaustion of 95% of the totalcapacity of the dry scrubber material).

[0057] Optionally, a pressure sensing device 234 and/or 220, to monitorthe pressure at the canister inlet and/or outlet respectively, may becoupled to an output module for outputting an indication of pressure forincreasing or decreasing the energy input on the downstream fluid motiveforce device or to signal a blockage in the sorbent bed or scrubberinlet.

[0058] A thermal monitoring device 226, may be coupled to an outputmodule for outputting an indication of temperature within the canisterand sorbent bed(s). In this respect, a number of thermal monitoringdevices, e.g., thermocouples, temperature probes, pyroelectric devices,etc., may be employed along the length of the bed in the direction ofgas flow therethrough.

[0059] Advantageously, the instant invention provides an inexpensivesolution to the potential release of toxic hydride gases to asemiconductor facility and/or environment. The inexpensive benefits ofthe system are in part due to the small footprint of the system and infurther part due to the low maintenance required for such a system asthere are no moving parts and only small amounts of toxic waste aregenerated for disposal. Additionally, there are no adverse conditionsoccurring at the CVD process due to the operation of such a system.

[0060] In a specific illustrative embodiment, a dry scrubber containermay be employed, utilizing an up-flow design and operation, withcentered up-flow of gas at the bed inlet. Additionally, a heat exchangecoil in the bed arranged for maintaining bed temperature at a desiredtemperature level.

[0061] The sorbent material used in the up-flow canister of the presentinvention may react with contaminants in an effluent stream (adsorbate)by physical or chemical adsorption kinetics. Physical adsorption is dueto intermolecular forces between an adsorbent and adsorbate (e.g. vander Waals interactions) and thus is reversible. Chemical adsorptioninvolves a chemical reaction between the adsorbent and the adsorbate.Preferably the up-flow canister of the present invention utilizes a dryscrubbing medium having a chemisorption relationship with processcontaminants. Various options are usefully employed with the scrubbersystem as described hereinabove including but not limited to end pointmonitoring, pressure and temperature sensing.

[0062] The system of the instant invention, preferably utilizes a dryresin sorbent material for trapping by chemisorption or physisorptionreaction toxic gas components in a by-pass diluent waste stream. The dryresin sorbent material may comprise any combination of resins useful forscrubbing process gases specific to the particular process toolrequiring effluent abatement and may be readily determined by those ofskill in the art. Sorbent bed materials include but are not limited to:carbon, CuSO₄, Cu(OH₂), CuO, CuCO₃, CuCO₃ Cu(OH)₂, Cu₂O, MnO_(x),wherein x is from 1 to 2 inclusive, AgO, Ag₂O, CoO, Co₃O₄, Cr₂O₃, CrO₃,MoO₂MoO₃, TiO₂, NiO, LiOH, Ca(OH)₂, CaO, NaOH, KOH, Fe₂O₃, ZnO, Al₂O₃,K₂CO₃, KHCO₃, Na₂CO₃, NaHCO₃, NH₃OH, Sr(OH)₂, HCOONa, BaOH, KMnO₄, SiO₂,ZnO, MgO, Mg(OH)₂, Na₂O₃S₂, SiO₂, triethylenediamine (TEDA) and mixturesthereof. Preferably, the dry resin sorbent material of the instantinvention comprises at least one of CuSO₄, Cu(OH₂), CuO, CuCO₃,CuCO₃Cu(OH)₂, Cu₂O, MnO_(x), wherein x is from 1 to 2 inclusive,Ca(OH)₂, and CaO.

[0063] Additionally, the sorbent material may further comprise astabilizer or the active component may be impregnated into or coatedonto an adsorbent substrate. Stabilizing materials help in themanufacturing of the sorbent media (e.g. in extrusion), and in somesituations serves to prevent the sorbent media from decomposing. Usefulstabilizers include but are not limited to the elements Be, Mg,transition metals selected from V, Mo, Co, Ni, Cu, Zn, B, Al, Si, Pb,Sb, Bi and oxides, hydroxides hydrogen carbonates, hydrogen sulfates,hydrogen phosphates, sulfides, peroxides, halides, carboxylates, and oxyacids thereof.

[0064] The instant invention as it relates to a by-pass abatement systemand associated process for removing toxic and/or hazardous hydride gascomponents from a process effluent waste stream deriving from a by-passline of a mixing manifold of an Epitaxial deposition process tool, inone embodiment comprises an up-flow or down-flow canister housingtherein a dry resin sorbent bed material comprising a metal oxide. Themetal oxide sorbent material having an affinity for metal hydridesreacts therewith to substantially remove the hydride species from theeffluent waste stream, until the capacity of the dry scrubber materialfor hydride species is at least partially exhausted.

[0065] To at least partially regain the capacity of the dry resinsorbent material for the hydride species, the instant invention mayfurther comprise means to contact the at least partially exhaustedcapacity dry resin sorbent material with an oxidant effective toregenerate the dry scrubber material subsequent to diminution of hydrideremoval capacity thereof, as more fully described in U.S. patentapplication Ser. No. 09/71 7,439, filed Nov. 21, 2000, now issued asU.S. Pat. No. 6,491,884 the disclosure of which, is hereby incorporatedherein in its entirety. The oxidant may be joined in oxidant supplyrelationship to the bed of dry resin sorbent material such that flowcircuitry is arranged to flow oxidant in contact with the bed of sorbentmaterial. Preferably, the flow circuitry is arranged to repetitively andalternatingly flow a diluent gas hydride-containing waste effluentstream followed by oxidation regeneration of the sorbent bed material.

[0066] Accordingly, while the invention has been described herein withreference to specific features and illustrative embodiments, it will berecognized that the utility of the invention is not thus limited, butrather extends to and encompasses other features, modifications andalternative embodiments as will readily suggest themselves to those ofordinary skill in the art based on the disclosure and illustrativeteachings herein. The claims that follow are therefore to be construedand interpreted as including all such features, modifications andalternative embodiments within their spirit and scope.

1. A point-of-use scrubber for treating a toxic and/or hazardouscomponent in an effluent waste stream deriving from a by-pass line of asemiconductor process tool, said scrubber comprising a canister having:an inlet in gas flow communication with the process tool”s bypass line;an outlet; and a sorbent bed therebetween; wherein said sorbent bedcontacts the toxic and/or hazardous component in the effluent wastestream to effectively reduce the concentration therein of the toxicand/or hazardous component.
 2. The scrubber of claim 1, wherein saidcanister is of an up-flow design.
 3. The scrubber of claim 1, whereinsaid canister is of a cubic geometry.
 4. The scrubber of claim 1,wherein said canister has a volume that is between 0.1 to 1000 liters.5. The scrubber of claim 1, wherein said canister has a volume that isbetween 4 and 50 liters.
 6. The scrubber of claim 1, having a zerofootprint.
 7. The scrubber of claim 1, wherein said canister is of anup-flow design and of a cubic geometry.
 8. The scrubber of claim 2,wherein said up-flow canister further comprises at least a lower plenumspace section and an upper plenum space section.
 9. The scrubber ofclaim 8, wherein said sorbent bed resides in a section that is betweensaid lower and upper plenum space sections.
 10. The scrubber of claim 8,wherein said lower plenum space section is in gas flow communicationwith said canister inlet.
 11. The scrubber of claim 8, wherein saidupper plenum space is in gas flow communication with said canisteroutlet.
 12. The scrubber of claim 1, wherein said by-pass line comprisesa mass flow controller.
 13. The scrubber of claim 12, wherein said massflow controller is upstream of said semiconductor process tool.
 14. Thescrubber of claim 1, wherein said by-pass line is coupled to at leastone of: a point-of-use house abatement system, atmosphere, a vent and aroof of a semiconductor facility.
 15. The scrubber of claim 1, whereinsaid toxic and/or hazardous component is selected from the groupconsisting of arsine, phosphine and germane.
 16. The scrubber of claim1, wherein said effluent waste stream further comprises a diluent gas.17. The scrubber of claim 1, wherein said sorbent bed is of a dry resinmaterial.
 18. The scrubber of claim 17, wherein said dry resin materialcomprises at least one metal oxide.
 19. The scrubber of claim 17,wherein said dry resin material comprises at least one componentselected from the group consisting of: carbon, CuSO₄, Cu(OH₂), CuO,CuCO₃, CuCO₃Cu(OH)₂, Cu₂O, MnO_(x), wherein x is from 1 to 2 inclusive,AgO, Ag₂O, CoO, Co₃O₄, Cr₂O₃, CrO₃, MoO₂, MoO₃, TiO₂, NiO, LiOH,Ca(OH)₂, CaO, NaOH, KOH, Fe₂O₃, ZnO, Al₂O₃, K₂CO₃, KHCO₃, Na₂CO₃,NaHCO₃, NH₃OH, Sr(OH)₂, HCOONa, BaOH, KMnO₄, SiO₂, ZnO, MgO, Mg(OH)₂,Na₂O₃S₂, SiO₂, triethylenediamine (TEDA) and mixtures thereof.
 20. Thescrubber of claim 17, wherein said dry resin material comprises at leastone component selected from the group consisting of: CuSO₄, Cu(OH₂),CuO, CuCO₃, CuCO Cu(OH)₂Cu₂O, MnO_(x), wherein x is from 1 to 2inclusive, Ca(OH)₂, and CaO.
 21. The scrubber of claim 1, furthercomprising at least one of: an end point monitor, a pressure sensor anda temperature sensor.
 22. An abatement apparatus for reducing theconcentration of a toxic and/or hazardous component, in a by-pass lineof an epitaxial deposition reactor, the apparatus comprising an up-flowcanister.
 23. A point-of-use, scrubber for treating an effluent wastestream comprising a toxic and/or hazardous component, said waste streamderiving from a by-pass line of a semiconductor process, said scrubbercomprising: an up-flow canister comprising: a lower section plenumspace; an upper section plenum space; at least one dry resin sorbent bedlayer therebetween an inlet in gas flow communication with the by-passprocess line; and an outlet, arranged such that the process effluentwaste stream flows in an upward direction to effectively reduce theconcentration of the toxic/and or hazardous component from the effluentwaste stream.
 24. A process for reducing the concentration of a toxicand/or hazardous component in a diluent waste stream deriving from aby-pass line of semiconductor process tool, said process comprising,contacting the diluent gas stream with a dry resin sorbent materialhaving an affinity for the toxic and/or hazardous component, to effectthe removal of at least a portion of the toxic and/or hazardouscomponent by a chemisorbent or physisorbent reaction between the sorbentmaterial and the toxic gas component in the process diluent waste streamto below TLV.